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| 6MBP300RA060 IGBT-IPM R series Features * Temperature protection provided by directly detecting the junction temperature of the IGBTs * Low power loss and soft switching * High performance and high reliability IGBT with overheating protection * Higher reliability because of a big decrease in number of parts in built-in control circuit 600V / 300A 6 in one-package Maximum ratings and characteristics Absolute maximum ratings(at Tc=25C unless otherwise specified) Item DC bus voltage DC bus voltage (surge) DC bus voltage (short operating) Collector-Emitter voltage INV Collector current Symbol Rating Min. VDC VDC(surge) VSC VCES DC IC 1ms ICP Duty=55.5% -IC Collector power dissipation One transistor PC Junction temperature Tj Input voltage of power supply for Pre-Driver VCC *1 Input signal voltage Vin *2 Input signal current Iin Alarm signal voltage VALM *3 Alarm signal current IALM *4 Storage temperature Tstg Operating case temperature Top Isolating voltage (Case-Terminal) Viso *5 Screw torque Mounting (M5) Terminal (M5) *1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10. *3 Apply VALM between terminal No. 16 and 10. *4 Apply IALM to terminal No. 16. *5 50Hz/60Hz sine wave 1 minute. *6 Recommendable Value : 2.5 to 3.0 N*m Unit V V V V A A A W C V V mA V mA C C kV N*m N*m Max. 450 500 400 600 300 600 300 1040 150 20 Vz 1 Vcc 15 125 100 AC2.5 3.5 *6 3.5 *6 0 0 200 0 0 0 0 -40 -20 - Fig.1 Measurement of case temperature Electrical characteristics of power circuit (at Tc=Tj=25C, Vcc=15V) Item INV Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Symbol ICES VCE(sat) VF Condition VCE=600V input terminal open Ic=300A -Ic=300A Min. - - - Typ. - - - Max. 1.0 2.8 3.0 Unit mA V V 6MBP300RA060 Electrical characteristics of control circuit(at Tc=Tj=25C, Vcc=15V) Item Power supply current of P-line side Pre-driver(one unit) Power supply current of N-line side three Pre-driver Input signal threshold voltage (on/off) Input zener voltage Over heating protection temperature level Hysteresis IGBT chips over heating protection temperature level Hysteresis Collector current protection level INV Over current protection delay time Under voltage protection level Hysteresis Alarm signal hold time SC protection delay time Limiting resistor for alarm *7 Switching frequency of IPM Symbol Iccp ICCN Vin(th) VZ TCOH TCH TjOH TjH IOC tDOC VUV VH tALM tSC RALM IGBT-IPM Condition Min. Typ. Max. fsw=0 to 15kHz Tc=-20 to 100C *7 6 32 fsw=0 to 15kHz Tc=-20 to 100C *7 18 96 ON 1.00 1.35 1.70 OFF 1.70 2.05 2.40 Rin=20k ohm 8.0 VDC=0V, Ic=0A, Case temperature, Fig.1 110 125 20 surface of IGBT chips 150 20 Tj=125C 450 Tj=25C Fig.2 10 11.0 12.5 0.2 1.5 2 Tj=25C Fig.3 12 1425 1500 1575 Unit mA mA V V V C C C C A s V V ms s ohm Dynamic characteristics(at Tc=Tj=125C, Vcc=15V) Item Switching time (IGBT) Switching time (FWD) Symbol Condition ton toff trr IC=300A, VDC=300V IF=300A, VDC=300V Min. 0.3 Typ. Max. 3.6 0.4 Unit s s s Thermal characteristics( Tc=25C) Item Junction to Case thermal resistance Case to fin thermal resistance with compound INV IGBT FWD Symbol Rth(j-c) Rth(j-c) Rth(c-f) Typ. 0.05 Max. 0.12 0.25 Unit C/W C/W C/W Recommendable value Item DC bus voltage Operating power supply voltage range of Pre-driver Switching frequency of IPM Screw torque Mounting (M5) Terminal (M5) Symbol VDC VCC fSW Min. 200 13.5 1 2.5 2.5 Typ. 15 Max. 400 16.5 20 3.0 3.0 Unit V V kHz N*m N*m 6MBP300RA060 Block diagram IGBT-IPM Pre-drivers include following functions a) Amplifier for driver b) Short circuit protection c) Undervoltage lockout circuit d) Over current protection e) IGBT chip over heating protection Outline drawings, mm Mass : 920g 6MBP300RA060 Characteristics (Representative) Control circuit IGBT-IPM Power supply current vs. Switching frequency Tj=100C 100 Power supply current : Icc (mA) P-side N-side 80 Vcc=13V 60 Vcc=17V Vcc=15V Input signal threshold voltage 2 : Vin(on),Vin(off) (V) 2.5 Input signal threshold voltage vs. Power supply voltage Tj=25C Tj=125C } Vin(off) 1.5 } Vin(on) 40 Vcc=17V Vcc=15V Vcc=13V 1 20 0.5 0 0 5 10 15 20 Switching frequency : fsw (kHz) 25 0 12 13 14 15 16 17 18 Power supply voltage : Vcc (V) Under voltage vs. Junction temperature 14 12 1 Under voltage hysterisis vs. Jnction temperature Under voltage hysterisis : VH (V) Under voltage : VUVT (V) 0.8 10 8 6 4 2 0 0.6 0.4 0.2 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 Junction temperature : Tj (C) Junction temperature : Tj (C) Alarm hold time vs. Power supply voltage 3 Over heating characteristics TcOH,TjOH,TcH,TjH vs. Vcc 200 Over heating protection : TcOH,TjOH (C) TjOH OH hysterisis : TcH,TjH (C) 150 TcOH 100 Alarm hold time : tALM (mSec) 2.5 Tj=125C 2 Tj=25C 1.5 1 50 TcH,TjH 0 0.5 0 12 13 14 15 16 17 18 Power supply voltage : Vcc (V) 12 13 14 15 16 17 Power supply voltage : Vcc (V) 18 6MBP300RA060 Inverter IGBT-IPM Collector current vs. Collector-Emitter voltage Tj=25C 500 Vcc=17V Collector Current : Ic (A) Vcc=13V Vcc=15V C o lle cto r c u rren t v s. C o lle cto r-E m itter vo lta ge T j= 12 5C 5 00 V cc= 1 7V C ollec to r C u rre nt : Ic (A ) 4 00 V cc= 1 3V V cc= 1 5V 400 300 3 00 200 2 00 100 1 00 0 0 0.5 1 1.5 2 2.5 3 3.5 Collector-Emitter voltage : Vce (V) 0 0 0 .5 1 1 .5 2 2 .5 3 3 .5 C o lle cto r-E m itte r v o lta g e : V ce (V ) Switching time vs. Collector current Edc=300V,Vcc=15V,Tj=25C 10000 Switching time : ton,toff,tf (nSec) 10000 Switching time : ton,toff,tf (nSec) Switching time vs. Collector current Edc=300V,Vcc=15V,Tj=125C toff 1000 ton toff ton 1000 tf tf 100 100 10 0 100 200 300 400 Collector current : Ic (A) 500 10 0 100 200 300 400 Collector current : Ic (A) 500 Forward current vs. Forward voltage 500 1000 Reverse recovery current : Irr(A) Reverse recovery time : trr(nSec) Reverse recovery characteristics trr,Irr vs. IF 400 Forward Current : If (A) 125C 25C trr125C trr25C 300 100 Irr125C Irr25C 200 100 0 0 0.5 1 1.5 2 2.5 3 Forward voltage : Vf (V) 10 0 100 200 300 400 500 Forward current : IF(A) 6MBP300RA060 IGBT-IPM Transient thermal resistance 1 Thermal resistance : Rth(j-c) (C/W) FWD IGBT 0.1 Collector current : Ic (A) 3000 2700 2400 2100 1800 1500 1200 900 600 300 0 0.01 0.1 1 0 0.001 Reversed biased safe operating area Vcc=15V,Tj < 125C = SCSOA (non-repetitive pulse) 0.01 RBSOA (Repetitive pulse) 100 200 300 400 500 600 700 0.001 Pulse width :Pw (sec) Collector-Emitter voltage : Vce (V) Power derating for IGBT (per device) 1200 Collecter Power Dissipation : Pc (W) Collecter Power Dissipation : Pc (W) 1000 800 600 400 200 0 0 20 40 60 80 100 120 140 160 Case Temperature : Tc (C) 600 500 400 300 200 100 0 0 20 Power derating for FWD (per device) 40 60 80 100 120 140 160 Case Temperature : Tc (C) Switching Loss vs. Collector Current Edc=300V,Vcc=15V,Tj=25C Switching loss : Eon,Eoff,Err (mJ/cycle) Switching loss : Eon,Eoff,Err (mJ/cycle) 20 20 S w itch in g L os s v s. C o lle cto r C u rren t E d c =3 00 V ,V cc = 15 V,T j= 12 5C Eon 15 15 10 Eon Eoff 10 Eoff 5 Err 0 0 50 100 150 200 250 300 Collector current : Ic (A) 5 Err 0 0 50 100 150 200 250 300 Collector current : Ic (A) 6MBP300RA060 IGBT-IPM 1200 Over current protection level : Ioc(A) 1000 Over current protection vs. Junction temperature Vcc=15V 800 600 400 200 0 0 20 40 60 80 100 120 140 Junction temperature : Tj(C) |
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